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VISHAY
TEMD1000/1020/1030/1040
Vishay Semiconductors
Silicon PIN Photodiode
Description
TEMD1000 series are high speed silicon PIN photodiodes molded in SMT package with dome lens. Due to integrated Daylight filter devices are sensitive for IR radiation only. High on axis sensitivity is provided by a viewing angle of 15.
TEMD1000 TEMD1020
TEMD1030
TEMD1040
Features
* Extra fast response times * Radiant sensitive area A = 0.25 mm2 * Daylight filter * Versatile terminal configurations * Package matched to IR Emitter series TSMF1000 and TSML1000 * Angle of half sensitivity = 15
18029
Applications
High speed detector for SMT IR Detector for Daylight application
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Reverse Voltage Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range Soldering Temperature t5s Tamb 25 C Test condition Symbol VR PV Tj Tstg Tstg Tsd Value 60 75 100 - 40 to + 100 - 40 to + 85 <260 Unit V mW C C C C
Basic Characteristics
Tamb = 25 C, unless otherwise specified Parameter Forward Voltage Breakdown Voltage Reverse Dark Current Diode Capacitance Reverse Light Current Test condition IF = 50 mA IR = 100 A, E = 0 VR = 10 V, E = 0 VR = 5 V, f = 1 MHz, E = 0 Ee = 1 mW/cm , = 870 nm, VR = 5 V Ee = 1 mW/cm2, = 950 nm, VR = 5 V Temp. Coefficient of Ira Absolute Spectral Sensitivity Angle of Half Sensitivity Wavelength of Peak Sensitivity Document Number 81564 Rev. 9, 21-May-03 VR = 5 V, = 870 nm VR = 5 V, = 870 nm VR = 5 V, = 950 nm
2
Symbol VF V(BR) Iro CD Ira Ira TKIra s() s() p
Min 60
Typ. 1.0 1 1.8 10
Max 1.3 10
Unit V V nA pF A A %/K A/W A/W deg nm www.vishay.com 1
5
12 0.2 0.60 0.55 15 900
TEMD1000/1020/1030/1040
Vishay Semiconductors
Parameter Range of Spectral Bandwidth Rise Time Fall Time VR = 10 V, RL = 50 , = 820 nm VR = 10 V, RL = 50 , = 820 nm Test condition Symbol 0.5 tr tf Min Typ. 840 to 1050 4 4 Max
VISHAY
Unit nm ns ns
Typical Characteristics (Tamb = 25 C unless otherwise specified)
1000
I ro - Reverse Dark Current ( nA ) Ira - Reverse Light Current ( A )
100
100
10
10 V R = 10 V 1
1.0
V =5V = 950 nm
20
40
60
80
100
16055
0.1 0.01
0.1 E e - Irradiance (
1 mW/cm 2 )
10
94 8427
Tamb - Ambient Temperature ( C )
Figure 1. Reverse Dark Current vs. Ambient Temperature
Figure 3. Reverse Light Current vs. Irradiance
I ra rel - Relative Reverse Light Current
1.4
C D - Diode Capacitance ( pF )
8
1.2
VR = 5 V = 950 nm
6 E=0 f = 1 MHz 4
1.0
0.8
2
0.6 0 20 40 60 80 100
94 8430
0 0.1 1 10 100 Tamb - Ambient Temperature ( C ) V R - Reverse Voltage ( V )
94 8416
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
Figure 4. Diode Capacitance vs. Reverse Voltage
www.vishay.com 2
Document Number 81564 Rev. 9, 21-May-03
VISHAY
TEMD1000/1020/1030/1040
Vishay Semiconductors
S ( ) rel - Relative Spectral Sensitivity
1.2 1.0 0.8 0.6 0.4 0.2 0 750
850
950
1050
1150
12786
- Wavelength ( nm )
Figure 5. Relative Spectral Sensitivity vs. Wavelength
0
Srel - Relative Sensitivity
10
20
30
1.0 0.9 0.8 0.7 0.6
40 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4
94 8248
Figure 6. Relative Radiant Sensitivity vs. Angular Displacement
Document Number 81564 Rev. 9, 21-May-03
www.vishay.com 3
TEMD1000/1020/1030/1040
Vishay Semiconductors
Package Dimensions in mm TEMD1000
VISHAY
16159
Package Dimensions in mm TEMD1020
16160
www.vishay.com 4
Document Number 81564 Rev. 9, 21-May-03
VISHAY
Package Dimensions in mm TEMD1030
TEMD1000/1020/1030/1040
Vishay Semiconductors
16228
Package Dimensions in mm TEMD1040
16760
Document Number 81564 Rev. 9, 21-May-03
www.vishay.com 5
TEMD1000/1020/1030/1040
Vishay Semiconductors
Reel Dimensions
VISHAY
18033
www.vishay.com 6
Document Number 81564 Rev. 9, 21-May-03
VISHAY
Taping TEMD1000
TEMD1000/1020/1030/1040
Vishay Semiconductors
18030
Taping TEMD1020
18031
Document Number 81564 Rev. 9, 21-May-03
www.vishay.com 7
TEMD1000/1020/1030/1040
Vishay Semiconductors
Taping TEMD1030
VISHAY
18032
Precautions For Use
1. Over-current-proof Customer must apply resistors for protection, otherwise slight voltage shift will cause big current change (Burn out will happen). 2. Storage 2.1 Storage temperature and rel. humidity conditions are: 5C to 35C, R.H. 60% 2.2 Floor life must not exceed 168 h, acc. to JEDEC level 3, J-STD-020. Once the package is opened, the products should be used within a week. Otherwise, they should be kept in a damp proof box with desiccant. Considering tape life, we suggest to use products within one year from production date. 2.3 If opened more than one week in an atmosphere 5C to 35C, R.H. 60%, devices should be treated at 60C 5C for 15 hrs. 2.4 If humidity indicator in the package shows pink color (normal blue), then devices should be treated with the same conditions as 2.3
Reflow Solder Profile
260 240 220
Temperature ( C )
200 180 160 140 120 100 80 60 0
+ 5 C/s
- 5 C/s
60 s to 120 s 5s
20 40 60 80 100 120 140 160 180 200 220 Time ( s )
17172
www.vishay.com 8
Document Number 81564 Rev. 9, 21-May-03
VISHAY
TEMD1000/1020/1030/1040
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 81564 Rev. 9, 21-May-03
www.vishay.com 9
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